Metal-germanium physical vapor deposition for semiconductor device defect reduction
展开▼
机译:金属锗物理气相沉积技术可减少半导体器件的缺陷
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
展开▼