首页> 外国专利> METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD

METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD

机译:制作该方法所用的半导体装置和半导体装置的方法,该方法所制得的薄膜晶体管基体和薄膜晶体管基体的制造方法,以及制造该方法所用的显示装置和显示装置的方法

摘要

A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.
机译:一种用于制造半导体装置的方法,包括以下步骤:在基板上形成由金属氧化物和半导体薄膜制成的绝缘膜的层叠结构;在层压结构的顶部上形成光吸收层;在光吸收层上照射能够被光吸收层吸收的波长的能量束,并通过在光吸收层中产生的热量使绝缘膜和半导体薄膜同时结晶。

著录项

  • 公开/公告号US2008283842A1

    专利类型

  • 公开/公告日2008-11-20

    原文格式PDF

  • 申请/专利权人 NAOKI HAYASHI;TOSHIAKI ARAI;

    申请/专利号US20080121398

  • 发明设计人 NAOKI HAYASHI;TOSHIAKI ARAI;

    申请日2008-05-15

  • 分类号H01L29/04;H01L21/336;

  • 国家 US

  • 入库时间 2022-08-21 19:33:38

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