LOW-H PLASMA TREATMENT WITH N2 ANNEAL FOR ELECTRONIC MEMORY DEVICES

摘要

A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N₂ with less than 10% H₂, performing planarization, performing in-situ low-H NH₃ plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.