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Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization

机译：等离子Ph3 / N2处理的IN0.53GA0.47AS MOS器件及器件结构优化的研究

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SUMARLINA AZZAH BTE SULEIMAN;
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年度 2013
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正文语种 en
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专利

1. Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment [J] . P. Huang, Q. H. Luc, A. Sibaja-Hernandez, AIP Advances . 2021,第1期

机译：通过原位NH3 / N2远程等离子体处理调查IN0.53GA0.47AS MOSFET的装置传输特性提高
2. Makes FLASH the difference between the intervention group and the treatment-as-usual group in an evaluation study of a structured education and treatment programme for flash glucose monitoring devices in people with diabetes on intensive insulin therapy: study protocol for a randomised controlled trial [J] . Melanie Schipfer, Carmen Albrecht, Dominic Ehrmann, Trials . 2018,第1期

机译：在一项针对强化胰岛素治疗的糖尿病患者快速血糖监测设备的结构化教育和治疗计划的评估研究中，使FLASH成为干预组和常规治疗组之间的区别：一项随机对照试验的研究方案
3. A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor [J] . Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, IEEE Transactions on Electron Devices . 2007,第12期

机译：关于DRAM单元晶体管的最新器件的实验研究，优化器件结构的建议
4. HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies [C] . Edward Yi-Chang, Quang-Ho Luc, Huy-Binh Do, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2016

机译：HfO2 / AlN / In0.53Ga0.47As MOS器件的电性能和可靠性研究
5. Fabrication and study of molecular devices and photovoltaic devices by metal/dielectric/metal structures. [D] . Hu, Bing. 2011

机译：通过金属/介电/金属结构制造和研究分子器件和光伏器件。
6. Makes FLASH the difference between the intervention group and the treatment-as-usual group in an evaluation study of a structured education and treatment programme for flash glucose monitoring devices in people with diabetes on intensive insulin therapy: study protocol for a randomised controlled trial [O] . Melanie Schipfer, Carmen Albrecht, Dominic Ehrmann, 2018

机译：在针对强化胰岛素治疗的糖尿病患者快速血糖监测设备的结构化教育和治疗计划的评估研究中使FLASH成为干预组和常规治疗组之间的区别：一项随机对照试验的研究方案
7. Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment [O] . P. Huang, Q. H. Luc, A. Sibaja-Hernandez, 2021

机译：通过原位NH3 / N2远程等离子体处理调查IN0.53GA0.47AS MOSFET的装置传输特性提高

Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization

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