A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

An Al_xGa_yIn_1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm². The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×10₂ cm⁻² and at most 1×10₆ cm^{-31 2}. It is thereby possible to provide an Al_xGa_yIn_1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the Al_xGa_yIn_1-x-yN crystal substrate, and a method of manufacturing the same.