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Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device
Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device
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机译:相变材料,包括该相变材料的相变存储器件以及制造和操作该相变存储器件的方法
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摘要
Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05≦x1≦0.30, 0.00≦y≦0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.
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机译:公开的可以是相变材料合金,包括该相变材料合金的相变存储器件以及制造和操作该相变存储器件的方法。相变材料合金可以包括Si和Sb。该合金可以是还包含O的Si-O-Sb合金。Si-O-Sb合金可以是Si x Sub> O y Sub> Sb z Sub >,其中,当x /(x + z)为x 1 B>时,0.05≤x 1 B>≤0.30,0.00≤y≤0.50,并且x + y + z Si-O-Sb合金可以进一步包含Si,O和Sb以外的元素。
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