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Ion implanter with function of compensating wafer cut angle and ion implantation method using the same
Ion implanter with function of compensating wafer cut angle and ion implantation method using the same
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机译:具有补偿晶片切割角功能的离子注入机及使用该离子注入机的离子注入方法
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摘要
Provided are an ion implanter for compensating for a wafer cut angle and an ion implantation method using the same. The ion implanter may include an orienter for rotating a wafer mounted on an alignment stage thereof to align a notch of the wafer and a wafer stage for mounting thereon the wafer whose notch has been aligned. The ion implanter may further include an ion implantation angle adjustment unit for adjusting an angle of the wafer stage, a cut angle measurement unit for measuring the wafer cut angle while the wafer is mounted and rotated on the alignment stage, and a controller for controlling the ion implantation angle adjustment unit to compensate for the measured wafer cut angle.
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