RF power transistor device with high performance shunt capacitor and method thereof

摘要

An integrated shunt capacitor comprises a bottom plate (86,88), a capacitor dielectric (92) overlying a portion of the bottom plate, a top plate (62) overlying the capacitor dielectric, a shield (74) overlying a portion of the top plate (62); and a metallization feature (70) disposed about and isolated from at least two sides of the top plate (62), the metallization feature (70) for coupling the bottom plate (86,88) to the shield (74). In one embodiment, an RF power transistor has an impedance matching network including an integrated shunt capacitor as described herein.