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RF POWER TRANSISTOR DEVICE WITH HIGH PERFORMANCE SHUNT CAPACITOR AND METHOD THEREOF
RF POWER TRANSISTOR DEVICE WITH HIGH PERFORMANCE SHUNT CAPACITOR AND METHOD THEREOF
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机译:具有高性能电容器的射频功率晶体管装置及其方法
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摘要
An integrated shunt capacitor comprises a bottom plate (62), a capacitor dielectric (92) overlying a portion of the bottom plate, a top plate (64) overlying the capacitor dielectric, a shield (74) overlying a portion of the top plate; and a metallization feature (70) disposed about and isolated from at least two sides of the top plate, the metallization feature for coupling the bottom plate to the shield. In one embodiment, an RF power transistor has an impedance matching network including an integrated shunt capacitor as described herein.
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