首页>
外国专利>
Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same
Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same
展开▼
机译:氮化铝薄膜,包含该薄膜的复合薄膜以及使用该薄膜的压电薄膜谐振器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.
展开▼