Al_xIn_yGa_1-x-yN mixture crystal substrate, method of growing Al_xIn_yGa_1-x-yN mixture crystal substrate and method of producing Al_xIn_yGa_1-x-yN mixture crystal substrate

摘要

A low dislocation density Al_xIn_yGa_1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an Al_xIn_yGa_1-x-yN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).