机译:在Si和GaP衬底上生长的稀氮化物GaP_(1-x-y)As_yN_x结构的结构,光学和电学表征
Department of Advanced Technologies, Graduate School of Natural and Applied Sciences, Gazi University,Photonics Application and Research Center, Gazi University;
Photonics Application and Research Center, Gazi University,Department of Physics, Faculty of Science, Gazi University;
Photonics Application and Research Center, Gazi University,Department of Physics, Faculty of Science, Gazi University;
Photonics Application and Research Center, Gazi University,Department of Physics, Faculty of Science, Gazi University;
Photonics Application and Research Center, Gazi University,Department of Physics, Faculty of Science, Gazi University;
机译:Si衬底上外延生长的垂直排列的AlAs / GaAs / GaP异质结构纳米线的结构,组成和光学表征
机译:金属有机气相外延生长的稀氮化镓Ga(NAsP)/ GaP量子阱结构的近室温电注入激光。
机译:基于MBE在Si(013)基板上的可变间隙N(P)-HGCDTE的MIS结构的电气特性
机译:(In,Ga)As / GaP量子点和(GaAsPN / GaPN)稀释的氮化物纳米层的结构和光学性质相干生长在GaP和Si衬底上,用于光子学和光伏应用
机译:通过金属有机化学气相沉积法生长的氮化铟,氮化铟镓合金的光学,结构和传输性能。
机译:通过Fe2O3:NiO比调节室温生长的外延薄膜的结构光学带隙和电性能
机译:(In,Ga)As / GaP量子点和(GaAsPN / GaPN)稀释的氮化物纳米层的结构和光学性质相干生长在GaP和Si衬底上,用于光子学和光伏应用