A DEVICE FOR MONITORING ION BEAM ETCHING PROCESS

摘要

A device for monitoring ion beam etching process characterized by an electrically isolated annular metallic aperture plate (1) placed at electrical virtual ground such as herein descrived, an ion detector(2) being movably fixed concentrically with the said aperture, a holder for placing a sample(3) being provided between the said annular metallic aperture plate(l) and the said ion detector(2) so as to allow an ion beam to impinge onto the area of the sample to be etched and effect absorption of secondary electron emission(4) by the said annular metallic aperture plate(l), the said annular metallic aperture plate(l) being connected to a current meter(5) for measuring the said secondary electron emission(4), the output of the said current meter(5) being connected to the input of a process controller(7), the output of the said ion beam detector(2) being also connected through a current meter(6) to the input of the said process controller(7), the output of the said process controller(7) being connected to power supply(8) of known ion beam source(9).