A NOVEL PROCESS FOR MANUFACTURING SILICON NANOSTRUCTURES IN SINGLE CRYSTALLINE SILICON AND SILICON NANOSTRUCTURES MADE THEREBY USEFUL FOR MAKING ELECTRONIC DEVICES.

摘要

A novel process for manufacturing silicon nonostructures in single crystalline silicon useful for making electronic devices which comprises placing a conducting mesh mask above a single crystalline semiconductor substrate so as to extend mesh shadow on the said substrate, irradiating the said mesh mask with an ion beam of energy of at least 75 MeV to provide ion flux in the range of 5 x 108 - 5 x 109 ions.cm-2 sec-1 in the said substrate to obtain semiconductor nonostructure in single crystalline semiconductor substrate