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Synthesis and characterization of cyclotriphosphazenes containing silicon as single solid-state precursors for the formation of silicon/phosphorus nanostructured materials

机译:含硅的环三磷腈作为单一固态前驱体的合成与表征,用于形成硅/磷纳米结构材料

摘要

The synthesis and characterization of new organosilicon derivatives of N3P3Cl6, N3P3[NH(CH2)3Si(OEt)3]6 (1), N3P3[NH(CH2)3Si(OEt)3]3[NCH3(CH2)3CN]3 (2), and N3P3[NH(CH2)3Si(OEt)3]3[HOC6H4(CH2)CN]3 (3) are reported. Pyrolysis of 1, 2, and 3 in air and at several temperatures results in nanostructured materials whose composition and morphology depend on the temperature of pyrolysis and the substituents of the phosphazenes ring. The products stem from the reaction of SiO2 with P2O5, leading to either crystalline Si5(PO4)6O, SiP2O7 or an amorphous phase as the glass Si5(PO4)6O/3SiO2·2P2O5, depending on the temperature and nature of the trimer precursors. From 1 at 800 °C, core−shell microspheres of SiO2 coated with Si5(PO4)6O are obtained, while in other cases, mesoporous or dense structures are observed. Atomic force microscopy examination after deposition of the materials on monocrystalline silicon wafers evidences morphology strongly dependent on the precursors. Isolated islands of size ∼9 nm are observed from 1, whereas dense nanostructures with a mean height of 13 nm are formed from 3. Brunauer−Emmett−Teller measurements show mesoporous materials with low surface areas. The proposed growth mechanism involves the formation of cross-linking structures and of vacancies by carbonization of the organic matter, where the silicon compounds nucleate. Thus, for the first time, unique silicon nanostructured materials are obtained from cyclic phosphazenes containing silicon.
机译:N3P3Cl6,N3P3 [NH(CH2)3Si(OEt)3] 6(1),N3P3 [NH(CH2)3Si(OEt)3] 3 [NCH3(CH2)3CN] 3的新型有机硅衍生物的合成和表征2),并且报道了N 3 P 3 [NH(CH 2)3 Si(OEt)3] 3 [HOC 6 H 4(CH 2)CN] 3(3)。 1、2和3在空气中以及几个温度下的热解会形成纳米结构的材料,其组成和形态取决于热解温度和磷腈环的取代基。产物源于SiO2与P2O5的反应,取决于三聚体前体的温度和性质,导致结晶Si5(PO4)6O,SiP2O7或非晶态相作为玻璃Si5(PO4)6O / 3SiO2·2P2O5。在800°C的温度下从1获得了涂有Si5(PO4)6O的SiO2核壳微球,而在其他情况下,则观察到了中孔或致密结构。在单晶硅晶片上沉积材料后,通过原子力显微镜检查,可以证明形态在很大程度上取决于前体。从1观察到约9 nm大小的孤立岛,而从3观察到平均高度为13 nm的致密纳米结构。Brunauer-Emmett-Teller测量显示中孔材料表面积低。所提出的生长机制涉及通过有机化合物碳化而形成交联结构和空位,其中硅化合物成核。因此,首次从包含硅的环状磷腈获得独特的硅纳米结构材料。

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