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Growth and chemical modification of silicon nanostructures templated in molecule corrals: Parallels with the surface chemistry of single crystalline silicon

机译:硅纳米结构的生长和化学改性在分子腐蚀中模板:具有单晶硅表面化学的相似之处

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摘要

Molecule corrals having diameters of 30-50 nm were created on highly oriented pyrolytic graphite (HOPG) using cesium ion bombardment. The molecule corrals were used as templates to grow silicon nanostructures by physical vapor deposition (PVD). The nanostructures could be grown with control over geometry (rings and mesas), and size distribution. In addition, transmission electron microscopy (TEM) results suggest that the silicon nanostructures are most likely polycrystalline.The chemical modification of these silicon nanostructures with nitrobenzene was compared to that of clean and hydrogen-terminated single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of the modified nanostructures showed peaks located at 398.9 eV, 400.4 eV, and 402.1 eV for the N 1s region, which are consistent with those observed on a Si(100) single crystal. The chemical modification was further characterized by the presence of nitrogen-containing peaks in TOF-SIMS spectra. We conclude that the reaction of nitrobenzene on silicon nanostructures provides evidence that the reactivity of the nanostructures is similar to that of hydrogen-terminated Si(111) and Si(100).
机译:使用铯离子轰击,在高度取向的热解石墨(HOPG)上产生具有30-50nm的直径的分子腐蚀。使用分子腐蚀作为模板通过物理气相沉积(PVD)生长硅纳米结构。可以通过对几何(环和台面)的控制来生长纳米结构,以及尺寸分布。此外,透射电子显微镜(TEM)结果表明硅纳米结构最有可能是多晶的。将这些硅纳米结构与硝基苯的化学改性与清洁和氢封端的单晶硅进行比较。改性纳米结构的X射线光电子能谱(XPS)显示位于398.9eV,400.4eV和402.1eV的峰,对于N 1S区域,与在Si(100)单晶上观察到的那些一致。通过在TOF-SIMS光谱中存在含氮峰的存在,进一步表征了化学改性。我们得出结论,硝基苯对硅纳米结构的反应提供了证据,证明纳米结构的反应性类似于氢封端的Si(111)和Si(100)的反应性。

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