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Growth and chemical modification of silicon nanostructures templated in molecule corrals: Parallels with the surface chemistry of single crystalline silicon

机译:分子库中模板化的硅纳米结构的生长和化学修饰:与单晶硅的表面化学平行

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摘要

Molecule corrals having diameters of 30-50 nm were created on highly oriented pyrolytic graphite (HOPG) using cesium ion bombardment. The molecule corrals were used as templates to grow silicon nanostructures by physical vapor deposition (PVD). The nanostructures could be grown with control over geometry (rings and mesas), and size distribution. In addition, transmission electron microscopy (TEM) results suggest that the silicon nanostructures are most likely polycrystalline.The chemical modification of these silicon nanostructures with nitrobenzene was compared to that of clean and hydrogen-terminated single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of the modified nanostructures showed peaks located at 398.9 eV, 400.4 eV, and 402.1 eV for the N 1s region, which are consistent with those observed on a Si(100) single crystal. The chemical modification was further characterized by the presence of nitrogen-containing peaks in TOF-SIMS spectra. We conclude that the reaction of nitrobenzene on silicon nanostructures provides evidence that the reactivity of the nanostructures is similar to that of hydrogen-terminated Si(111) and Si(100).
机译:使用铯离子轰击在高度取向的热解石墨(HOPG)上创建直径为30-50 nm的分子库。通过物理气相沉积(PVD)将分子围栏用作模板来生长硅纳米结构。可以通过控制几何形状(环和台面)以及尺寸分布来生长纳米结构。此外,透射电镜(TEM)结果表明硅纳米结构最有可能是多晶的。将硝基苯对这些硅纳米结构的化学修饰与干净的氢封端的单晶硅进行了比较。修饰的纳米结构的X射线光电子能谱(XPS)显示,对于N 1s区域,峰位于398.9 eV,400.4 eV和402.1 eV,与在Si(100)单晶上观察到的一致。化学修饰的特征还在于TOF-SIMS光谱中存在含氮峰。我们得出结论,硝基苯在硅纳米结构上的反应提供了证据,表明纳米结构的反应性类似于氢封端的Si(111)和Si(100)。

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