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MAGNETICALLY-ANNEALED NANOWIRES AND METHODS FABRICATING THE SAME

机译:磁性退火纳米线及其制造方法

摘要

ABSTRACT MAGNETICALLY-ANNEALED NANOWIRES AND METHODS OF FABRICATING THE SAMEA method comprising: providing a plurality of nanowires with an average diameter of 60nm or less and being arranged substantially parallel to each other along their longitudinal axis, annealing the nanowires, and applying a magnetic field that is alignedwith the longitudinal axis of the nanowires at least partially during annealing. Also a magnetic film comprising an array of magnetically-annealed nanowires having an average diameter of 60nm or less and being arranged substantially parallel to each other along their longitudinal axis.Figure 3
机译:抽象磁退火纳米线和方法相同的一种方法,包括:提供多个纳米线,其平均直径为60nm或更小,并沿它们彼此基本平行排列纵轴,对纳米线进行退火,并施加对齐的磁场在退火过程中,纳米线的纵轴至少部分地处于其中。也磁性膜,该磁性膜包括具有以下特征的磁退火纳米线阵列:平均直径为60nm或更小,并且基本上彼此平行排列沿其纵轴。图3

著录项

  • 公开/公告号SG148872A1

    专利类型

  • 公开/公告日2009-01-29

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号SG20070041734

  • 发明设计人 NG WEI BENG;HIROYUKI OKITA;

    申请日2007-06-13

  • 分类号B82B3/00;C25D3/56;H01L21/70;

  • 国家 SG

  • 入库时间 2022-08-21 19:25:08

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