METHOD AND STRUCTURE FOR RIDGE WAVEGUIDE QUANTUM CASCADE LASER WITH P-TYPE OVERGROWTH

摘要

The performance characteristics of ridge waveguide QCL may be improved in accordance with the invention by replacing the insulating dielectric layers such as SiO2, Si3N4 or SiC with p-type InP overgrowth layers as well as p- type AlInAs or InGaAsP overgrowth layers, for example .