SILICON SINGLE CRYSTAL WAFER FOR IGBT, METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR ASSURING RESISTIVITY OF SILICON SINGLE CRYSTAL WAFER FOR IGBT

摘要

Provided is a silicon single crystal wafer composed of a silicon single crystal grown by Czochralski method for an IGBT. The pulling speed margin can be increased and EG processing is not required for the wafer. The wafer has a DZ layer having a sufficient thickness as an IGBT wafer and has IG performance with a small resistivity variance. The wafer has a device region, which is arranged on the entire wafer surface to have an IGBT device formed on the front side, and a gettering region, which is positioned closer to the rear side compared with the device region and is to be removed after the device is formed. The dimension of the device region in the thickness direction is 100-200μm, COP defects and dislocation clusters are eliminated over the entire region in the crystal diameter direction, the interstitial oxygen concentration is 8.5×1017 atoms/cm3 or less and variance of resistivity within the wafer surface is 5% or less.