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METHOD FOR PASSIVATING THE RESONATOR END FACES OF SEMICONDUCTOR LASERS ON THE BASIS OF III-V SEMICONDUCTOR MATERIAL
METHOD FOR PASSIVATING THE RESONATOR END FACES OF SEMICONDUCTOR LASERS ON THE BASIS OF III-V SEMICONDUCTOR MATERIAL
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机译:基于III-V半导体材料钝化半导体激光谐振器端面的方法
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摘要
A method and device for passivating the resonator end faces, in particular the cleaved edges of semiconductor laser diodes, by high-temperature epitaxy of the quaternary compound semiconductor InSUBx/SUBGaSUB1-x/SUBAsSUBy/SUBPSUB1-y/SUB, where (0=x=1 and 0=y=1). To passivate the InSUBx/SUBGaSUB1-x/SUBAsSUBy/SUBPSUB1-y/SUB, an additional passivation layer may be applied in situ. The semiconductor crystal is brought to the temperature required for the epitaxy by being heated. To avoid thermal destruction of the contact metal during the epitaxy, the metal is only deposited after the cleaving operation and the passivation. The deposition of the metal on the passivated laser bar is carried out by means of special equipment that allows deposition of metal on the entire surface of the laser and at the same time prevents vapour deposition on the cleaved edges. The method and device can be applied to the production of high-power laser diodes.
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机译:通过四元化合物半导体In x SUB> Ga 1-x SUB的高温外延钝化谐振器端面,特别是半导体激光二极管的劈开边缘的方法和装置> As y SUB> P 1-y SUB>,其中(0 <= x <= 1和0 <= y <= 1)。为了钝化In x SUB> Ga 1-x SUB> As y SUB> P 1-y SUB>,可以添加一个钝化层原位应用。通过加热使半导体晶体达到外延所需的温度。为了避免在外延期间接触金属的热破坏,仅在分裂操作和钝化之后才沉积金属。金属在钝化激光棒上的沉积是通过专用设备进行的,该设备允许将金属沉积在激光器的整个表面上,同时防止气相沉积在劈开的边缘上。该方法和装置可以应用于大功率激光二极管的生产。
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