Band alignment at the hybrid heterojunction between S-passivated III-V semiconductors and C_(60)

摘要

The interface between C_(60) and several commonly used S-passivated III-V semiconductors was studied using x-ray and ultraviolet photoelectron spectroscopy. It is found that the band alignment for S-passivated III-V semiconductors used in real devices differs significantly from that of in situ-prepared surfaces previously reported. The energy-level alignment is found to be nearly identical for the different III-V semiconductors. This phenomenon is explained by Fermi level pinning, which is consistent with interface dipole theory from traditional semiconductor device physics.