首页> 外国专利> METHODS FOR FABRICATING SUB-RESOLUTION ALIGNMENT MARKS ON SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR STRUCTURES INCLUDING SAME

METHODS FOR FABRICATING SUB-RESOLUTION ALIGNMENT MARKS ON SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR STRUCTURES INCLUDING SAME

机译:在半导体结构和包括相同结构的半导体结构上制造子分辨率对准标记的方法

摘要

A method of fabricating semiconductor structures comprising sub-resolution alignment marks is disclosed. The method comprises forming a dielectric material on a substrate and forming at least one sub-resolution alignment mark extending partially into the dielectric material. At least one opening is formed in the dielectric material. Semiconductor structures comprising the sub-resolution alignment marks are also disclosed.
机译:公开了一种制造包括亚分辨率对准标记的半导体结构的方法。该方法包括在基板上形成电介质材料,以及形成至少一个部分地延伸到电介质材料中的子分辨率对准标记。在介电材料中形成至少一个开口。还公开了包括亚分辨率对准标记的半导体结构。

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