A PROCESS FOR THE PREPARATION OF PHOTO LUMINESCENT NANOSTRUCTURED SILICON THIN FILMS

摘要

The present invention provides a process for the preparation of nano structured silicon thin film using radio frequency (rf) plasma discharge useful for light emitting devices such as light emitting diode, laser etc. The present invention shows the possibility of precise control of the nanocrystal size of silicon and its uniform distribution without doping using plasma processing for obtaining efficient photoluminescence at room temperature. Process developed to deposit the photo luminescent nano structured silicon thin films using plasma enhanced chemical vapour deposition technique can find use in electroluminescence devices like light emitting diodes (LEDs), LASER etc. This could also be advantageous for integration of silicon photonic devices with the existing silicon microelectronic technology.