DEVICE BY COLD JUNCTION, PROCESS FOR MANUFACTURING DEVICE, AND COLD JUNCTION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a device that can be obtained by bonding a substrate formed of an unbondable material (for example, SiO₂ system material substrate) in the actual bonding strength with room temperature bonding process, and also to provide a method for manufacturing the same device.;SOLUTION: An intermediate material layer 28 generating a bonding strength is formed at an interface 27 between a first substrate 11 and a second substrate 12, and a plurality of metal elements are included in this intermediate material layer. An existing ratio of a plurality of metal elements at the interface is controlled to 0.07 or more with an operation parameter during the sputtering process.;COPYRIGHT: (C)2008,JPO&INPIT