FORMATION OF OHMIC CONTACTS IN III-NITRIDE LIGHT EMITTING DEVICES

摘要

A III-nitride light emitting diode and a manufacturing method thereof are provided to form the Ohmic contact by optimizing the P-type layer of the light emitting device. The n-type layer(16) of the III-nitride is formed on a substrate(14). An active area(18) is formed on the n-type layer. The p-type AlxGa(1-x)N(0=x=1) layer(20) is formed on the active area. The p-type transition layer(24) is formed on the p-type AlxGa (1-x)N layer and comprises super lattice. The super lattice comprises the first sub layer of the doped p-type material, and the second sub layer which has the dopant concentration lower than the dopant concentration of the first sub layer. The light emitting diode comprises the n-type contact unit connected to the n-type layer, and the p-type contact unit connected to the p-type transition layer.