METHOD OF FORMING A DUAL DAMASCENE PATTERN IN SEMICONDUCTOR DEVICE

摘要

A kind of method, the dual damascene pattern for being used to form semiconductor device are arranged to minimize a sputter etch characteristic by minimizing the energetic ion energy in terms of forming a dual damascene pattern. One interlayer insulating film (102) is formed in semi-conductive substrate (100). One contact hole (106) is formed by etching interlayer insulating film. It includes contact hole that one protective film, which is formed in interlayer insulating film, for filling contact hole. Protective film, the interlayer insulating film in the region that a bar ditch (112) are formed on it, is etched. Ditch forms wide width by the interlayer insulating film for being isotropically etched an exposure than contact hole with one.