APPARATUS AND METHOD FOR MODELING OF SOURCE-DRAIN CURRENT OF THIN FILM TRANSISTOR

摘要

An apparatus and a method for modeling a source-drain current of a thin film transistor are provided to performing the modeling for an oxide thin film transistor and an organic thin film transistor. A modeling formula executing unit inputs various input values to a modeling formula when modeling variables are determined in modeling formula fitting unit(110). The modeling formula executing unit predicts an actual result according to the modeling formula. By applying the actually determined modeling variables to the modeling formula, a modeling formula applying unit(111) settles the modeling formula. In order to obtain an actual output value, the modeling formula executing unit input actual input data.