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Apparatus and Method for modeling of source-drain current of Thin Film Transistor
Apparatus and Method for modeling of source-drain current of Thin Film Transistor
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机译:薄膜晶体管的源极-漏极电流建模的装置和方法
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摘要
Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.
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