P-TYPE ZNO SEMICONDUCTOR BY LI AND COLUMN VII IMPURITY CODOPING

摘要

A p type ZnO semiconductor doping Li and 7 group impurity is provided to facilitate formation of compound by increasing the bonding energy for forming Li-7 group-Li impurity compound with the coulomb interaction between two impurities. The Li and VII group doped with the impurity of Li and VII group is implanted into a ZnO which is II-IV group semiconductor. The density of the impurity of Li is higher than the density of the 7 group impurity. A ratio of the impurity of Li and 7 group is 2:1. The 7 group impurity has the element of F.