METHOD FOR FORMING A VERTICAL CHANNEL TRANSISTOR OF A SEMICONDUCTOR DEVICE, INCREASING THE WIDTH OF A WORD LINE HOLE THROUGH A WET CLEANING PROCESS USING BOE

摘要

PURPOSE: A method for forming a vertical channel transistor of a semiconductor device is provided to reduce the resistance of a word line by increasing the width of a word line hole through a wet cleaning process using BOE(Buffered Oxide Etchant).;CONSTITUTION: A word line hole(490) is formed by selectively etching an insulating layer reclaimed in a gap area between active pillars(410). The width of the word line hole is extended by etching the insulating layer isotropically. A residue generated in a process for forming the word line hole is removed. A conductive material is reclaimed in the word line hole.;COPYRIGHT KIPO 2010