SEMICONDUCTOR DEVICE WITH A STRAINED CHANNEL AND A METHOD FOR FABRICATING THE SAME, CAPABLE OF INCREASING VOLUME OF AN EPITAXIAL LAYER WITHOUT INCREASING DEPTH OF A RECESS PATTERN

摘要

PURPOSE: A semiconductor device with a strained channel and a method for fabricating the same are provided to effectively generate a strain in a channel without increasing concentration of germanium or carbon in an epitaxial layer applied to a source and a drain.;CONSTITUTION: A semiconductor device with a strained channel includes a gate pattern(25), a recess pattern(28), a source(S) and a drain(D). The gate pattern is formed on a substrate(21). The recess patterns are formed on both substrates of the gate pattern. A side wall(28A) of the recess pattern is extended toward a lower part of the gate pattern. A source and a drain bury the recess pattern. The source and drain form a strained channel under the gate pattern.;COPYRIGHT KIPO 2010