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THIN FILM TYPE ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME AND THIN FILM TYPE ELECTRON SOURCE APPLICATION DEVICE

机译:薄膜型电子源及其制造方法和相同的薄膜型电子源应用装置

摘要

The present invention is to provide a thin-film electron source with the high heat resistance . ; The present invention is therefor provided with the upper electrode formed in contact with the substrate, and a lower electrode formed on one main surface side of the substrate , and the insulating layer formed in contact with the lower electrode , the insulating layer in the thin-film electron source , and the upper electrode of the first underlayer , a second underlayer , an intermediate layer , a laminated structure of the surface layer , wherein the first underlayer is IrO 2 or RuO 2 a as the main constituent material and the second layer and the underlying Ir or Ru as the main constituent material , the intermediate layer is PtIr, PtRu, the type being selected from the group of the main constituent material and PtRh , the the surface layer is Au, and the type being selected from the group of Ag as the main constituent material .
机译:本发明旨在提供一种具有高耐热性的薄膜电子源。 ;因此,本发明提供:上部电极形成为与基板接触,下部电极形成在基板的一个主表面侧,绝缘层与下部电极接触,绝缘层形成为薄壁。薄膜电子源,第一底层的上电极,第二底层,中间层,表面层的叠层结构,其中第一底层为IrO 2 或RuO 2a。 作为主要构成材料,第二层和下面的Ir或Ru作为主要构成材料,中间层为PtIr,PtRu,类型选自主要构成材料和PtRh,表面层是Au,其类型选自Ag作为主要构成材料。

著录项

  • 公开/公告号KR100893173B1

    专利类型

  • 公开/公告日2009-04-17

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070035928

  • 发明设计人 이와사키 도미오;

    申请日2007-04-12

  • 分类号H01J1/312;H01J1/30;H01J9/02;H01J31/12;

  • 国家 KR

  • 入库时间 2022-08-21 19:12:00

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