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Thin film type electron source and manufacturing method of thin film type electron source and display device

机译:薄膜型电子源及其制造方法和显示装置

摘要

A method of manufacturing a thin film type electron source having a lower electrode (11), an upper electrode, and an insulating layer provided between the lower electrode (11) and the upper electrode, and a first step of forming an anodic oxide film on the surface of the lower electrode (11) by an anodic oxidation method and said first A second step of removing the surface of the anodic oxide film formed in the step by etching is performed, and after the second step, an anodic oxide film is formed on the surface of the lower electrode (11) by an anodic oxidation method to form an insulating layer. Thus, the thickness of the insulating layer outer layer (26) having a large amount of impurities is reduced in the insulating layer formed of the anodic oxide film in the thin film type electron source, and the electron trap amount can be reduced.
机译:一种具有下部电极(11),上部电极和设置在下部电极(11)和上部电极之间的绝缘层的薄膜型电子源的制造方法,以及在其上形成阳极氧化膜的第一步。所述下部电极(11)的表面通过阳极氧化方法和所述第一步骤进行。第二步骤是通过蚀刻去除在该步骤中形成的阳极氧化膜的表面,并且在第二步骤之后,形成阳极氧化膜。通过阳极氧化法在下部电极(11)的表面上形成绝缘层。因此,在薄膜型电子源中由阳极氧化膜形成的绝缘层中,具有大量杂质的绝缘层外层(26)的厚度减小,并且可以减少电子俘获量。

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