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THIN FILM TYPE ELECTRON SOURCE AND THIN FILM TYPE ELECTRON SOURCE APPLICATION EQUIPEMENT

机译:薄膜型电子源和薄膜型电子源应用设备

摘要

PROBLEM TO BE SOLVED: To enable degradation of an insulation layer hardly generated in a thin film type electron source laminating a lower part electrode, the insulation layer and un upper electrode in that order.;SOLUTION: The upper electrode is made in a three-layer structure with an interface layer, an intermediate layer, and a surface layer from an insulation layer side. Sublimation enthalpy of an intermediate layer material is to be greater than that of the surface layer, and smaller than that of the interface layer. Or, the surface layer is omitted and a two-layer structure is made. By doing so, an image display device or a high-speed electron beam drawing device with a long life and high intensity can be achieved.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:为了使几乎不会在层叠下部电极,绝缘层和上部电极的薄膜型电子源中产生的绝缘层降级;解决方案:上部电极由三层制成:从绝缘层侧起具有界面层,中间层和表面层的层结构。中间层材料的升华焓应大于表面层的升华焓,而小于界面层的升华焓。或者,省略表面层并制成两层结构。通过这样做,可以实现具有长寿命和高强度的图像显示装置或高速电子束描绘装置。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005050829A

    专利类型

  • 公开/公告日2005-02-24

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP20040335288

  • 发明设计人 SUZUKI MUTSUMI;KUSUNOKI TOSHIAKI;

    申请日2004-11-19

  • 分类号H01J1/312;H01J31/12;H01J37/305;

  • 国家 JP

  • 入库时间 2022-08-21 22:30:58

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