SUBSTRATE FOR GROWING GALLIUM NITRIDE, METHOD FOR PREPARING SUBSTRATE FOR GROWING GALLIUM NITRIDE AND METHOD FOR PREPARING GALLIUM NITRIDE SUBSTRATE

摘要

It is a combination of ELO mask defects kind of law (種) Act mask potential (轉 位) to grow a small GaN crystals. ELO mask is a GaN crystal without grown directly and grown in the lateral direction, the mask defect species is to grow to the closed defect accumulating regions defect concentration. ELO mask, using any of the materials of SiN, SiON, SiO _2, and the defect species mask is to use any one of materials of Pt, Ti, Ni. Sapphire, GaAs, spinel, Si, InP, SiC, etc. of the single crystal substrate, or by coating to the substrate that the GaN buffer layer on the single crystal substrate of them, the vapor GaN by forming the ELO mask and the defect species mask complementarily (氣相) grown.