A method for applying an anti-reflective layer on a plurality of radiation-emitting semiconductor chip

摘要

A method for producing a plurality of radiation-emitting semiconductor chip (1), each with an epitaxially produced multilayer structure (8), the electromagnetic radiation generating active zone (12), and in each case one of the multilayer structure (8) supporting carrier element (3), the at least one side surface (7) by means of which electromagnetic radiation is coupled out, characterized in that a along separating (10) to individual support elements (3) with multilayer structure (8) a severed warfer (2), on an expandable support (5) is fixed, is provided, the distances of the semiconductor chip (1) to one another by means of stretching of the expandable support can be increased, the semiconductor chip (1) are fixed on an intermediate carrier, the expandable support is removed and subsequently in each case at least an antireflection layer (9) on at least a portion of the side surface (7) is applied.