Light emitting diode has epitaxy substrate having rough side with alternately arranged combs and valleys, where epitaxial film structure is formed and coated on combs and valleys of epitaxy substrate

摘要

The light emitting diode has an epitaxy substrate (6) having a rough side with alternately arranged combs (61) and valleys (62). Each combs has a rough surface (610), formed with a close concentration of alternately arranged slots (611) and projections (612). An epitaxial film structure (7) is formed and coated on the combs and the valleys of the epitaxy substrate. The epitaxy substrate is made of a material, which is selected from the group with a spinal structure, which are sapphire, silicon carbide, silicon, zinc oxide, gallium arsenide, gallium nitride and magnesium aluminate. An independent claim is also included for a method for producing light emitting diode.