Method for manufacturing semiconductor components with field-effect transistors, involves forming stress inducing dielectric layer over multiple p-channel transistors

摘要

The method involves forming a stress inducing dielectric layer (120a,120b) over multiple p-channel transistors. The former stress inducing layer causes a form by deformation in the multiple p-channel transistors. Another stress inducing dielectric layer is formed over a n-channel transistor. The intermediate layer material (130) is made of silicon dioxide and the oxidizable material comprises silicon or germanium.