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Method for producing silicon solar cell, involves producing porous silicon layer at lower partial zones of emitter surface not covered by etching barrier

机译:硅太阳能电池的制造方法,涉及在没有被蚀刻阻挡层覆盖的发射极表面的下部局部区域制造多孔硅层。

摘要

The method involves producing a two-dimensionally extending emitter (5) at an emitter surface of a solar cell substrate (21). A porous silicon layer (27) is produced at lower partial zones (9) of the emitter surface which is not covered by an etching barrier (25). The porous silicon layer is oxidized and back-etched. An independent claim is included for silicon solar cell.
机译:该方法包括在太阳能电池基板(21)的发射器表面处产生二维延伸的发射器(5)。在没有被蚀刻阻挡层(25)覆盖的发射极表面的下部局部区域(9)处产生多孔硅层(27)。多孔硅层被氧化并回蚀。硅太阳能电池包含独立权利要求。

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