Micro-electronic structure manufacturing method, involves preparing donor substrate with semiconductor material surface, forming coating layer on surface, and mounting molecule of free surface of layer on face of receptor substrate

摘要

The method involves preparing a donor substrate (1) with a semiconductor material surface, where the material is chosen from one of silicon, germanium, gallium nitride, gallium arsenide, lithium tantalate and lithium niobate. A coating layer (3), made of a material such as oxides, metallic element, metallic alloy, silicon oxynitride and nitride, is formed at the semiconductor material surface by an ion-beam sputtering, where the layer has a free surface. A molecule of the free surface is mounted on a face of a receptor substrate (4).