METHOD FOR LOCALIZED DIELECTRIC EPITAXY HETERO, IN PARTICULAR GERMANIUM ON SILICON OXIDE, AND METHOD AND SYSTEM FOR PRODUCING A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT MANUFACTURING BASE

摘要

The present invention relates to a process for producing localized epitaxial heterogeneity of a semiconductor layer such as germanium by lateral growth on the surface of an insulating material. It also relates to the production of a homogeneous or heterogeneous germanium integrated circuit manufacturing base or "wafer", as well as a system for producing such bases. A spatially selective etching producing a composite surface layer comprising a first material (106, 206) in a first region and a second material (104, 204). These regions are contiguous in at least one interface zone (1070, 2070) having a difference in level between this first region and this second region, - a chemical etching (128, 225) of the first material to discover a part ( 107, 207) of the substrate in the vicinity of this interface: - a growth (129, 130) of this semiconductor (109, 110) from this uncovered part (107), called the germination zone.