首页> 外国专利> MANUFACTURING METHOD FOR MICROELECTRONIC MECHANICAL SYSTEM (MEMS) ELEMENT AND MICROELECTRONIC MECHANICAL SYSTEM (MEMS) ELEMENT

MANUFACTURING METHOD FOR MICROELECTRONIC MECHANICAL SYSTEM (MEMS) ELEMENT AND MICROELECTRONIC MECHANICAL SYSTEM (MEMS) ELEMENT

机译:微电子机械系统元件的制造方法及微电子机械系统元件的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a microelectronic mechanical system (MEMS) element provided with a mirror array using a wall electrode easily.;SOLUTION: In this manufacturing method for the MEMS element, a groove part 113a is formed in a first electrode pattern 113, and a groove part is also formed in a second electrode pattern (not shown) in the same way. For example, etching can be performed by using SF6 as etching gas by the DRIE etching technology being the well-known Si deep-digging processing technology. Here, in the etching forming the groove part 113, etching time is controlled to leave the first electrode pattern 113 (a silicon layer 103) in a bottom part of the formed groove part 113a. For example, etching rate is measured in advance by an experiment, processing time is calculated to leave the first electrode pattern 113 (the silicon layer 103) in the bottom part of the groove part 113a, and the result of calculation is applied to the etching.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种利用壁电极容易地制造具有反射镜阵列的微电子机械系统(MEMS)元件的方法。解决方案:在该MEMS元件的制造方法中,在基板上形成槽部113a。第一电极图案113和凹槽部分也以相同方式形成在第二电极图案(未示出)中。例如,可以通过作为众所周知的Si深挖加工技术的DRIE蚀刻技术使用SF 6 作为蚀刻气体来进行蚀刻。在此,在形成槽部113的蚀刻中,控制蚀刻时间以使第一电极图案113(硅层103)残留在形成的槽部113a的底部。例如,通过实验预先测量蚀刻速率,计算处理时间以将第一电极图案113(硅层103)留在凹槽部分113a的底部中,并且将计算结果应用于蚀刻。 。;版权:(C)2010,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号