Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements

摘要

The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the porous matrix dimensions, number of deposited barium titanate layers, and material of capacitor structure plates has been analyzed.