BIPOLAR FIELD-EFFECT TRANSISTOR WHERE CARRIER MOBILITY IS TUNED UP

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor, which is manufactured by simple and stable material quality, and further which uses an organic semiconductor superior in electric characteristics and can control FET characteristics, and to provide a semiconductor chip on which the transistor is formed.;SOLUTION: In the field effect transistor, an organic semiconductor layer includes a charge transportation material containing a self-organization nanosize structure comprising hexa-peri-hexabenzocoronene dielectric having the group having fullerene in the molecule and hexa-peri-hexabenzocoronene dielectric which does not have the group having fullerene in the molecule. In the semiconductor chip, the field effect transistor is formed on a silicon substrate covered with a silicon oxide insulating film.;COPYRIGHT: (C)2010,JPO&INPIT