Field-effect transistor with increased carrier mobility

摘要

According to one exemplary embodiment, FET is located in the substrate (104) on includes the (112) channels located (104) in the substrate. In addition, the FET includes a (116) a first gate insulating layer disposed on the channel (112) on. (116) has a first thermal expansion coefficient of the first gate insulating layer. In addition, FET includes a (114) a first gate electrode which is located the first gate insulating layer (116) on. To increase the carrier mobility of the FET in (114) has a second thermal expansion coefficient different from the first thermal expansion coefficient of the first gate electrode. For example, the second thermal expansion coefficient is greater than the first coefficient of thermal expansion. For example an increase in carrier mobility, caused by the tensile strain is generated in the channel (112) of.