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CIRCUIT ANALYSIS METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT, CIRCUIT ANALYSIS PROGRAM AND CIRCUIT ANALYSIS DEVICE

机译:电路分析方法,制造半导体集成电路的方法,电路分析程序及电路分析装置

摘要

PPROBLEM TO BE SOLVED: To perform timing analysis with high analytic precision while shortening a TAT. PSOLUTION: A circuit analysis device 10 performs a timing analysis to a design target circuit after a layout change. The circuit analysis device 10 includes a storage device 13 in which an extraction range reference 41 is set, an extraction range setting part 1 and a timing analysis part. The extraction setting part 1 sets the extraction range reference 41 including a layout-changed portion as a parasitic element extraction target range 100. The timing analysis parts 2, 4 and 6 perform timing analysis by using, as an analysis target, predetermined ranges 100, 200 and 300 including a parasitic element extracted from an extraction target range 100. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:在缩短TAT的同时,以高分析精度执行时序分析。解决方案:电路分析装置10在布局改变之后对设计目标电路执行时序分析。电路分析装置10包括设置有提取范围基准41的存储装置13,提取范围设定部1和时序分析部。提取设定部1将包含布局变更部的提取范围基准41设定为寄生要素提取对象范围100。定时分析部2、4、6通过将规定范围100、100作为预定对象进行定时分析。 200和300包括从提取目标范围100中提取的寄生元素。

COPYRIGHT:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2009271607A

    专利类型

  • 公开/公告日2009-11-19

    原文格式PDF

  • 申请/专利权人 NEC ELECTRONICS CORP;

    申请/专利号JP20080119342

  • 发明设计人 NAGAI KOICHI;

    申请日2008-04-30

  • 分类号G06F17/50;H01L21/82;

  • 国家 JP

  • 入库时间 2022-08-21 19:04:55

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