DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR ELEMENT MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR ELEMENT MEMBER, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide a damage evaluation method of a compound semiconductor element member which precisely evaluates the grade of surface damage, a production method of a compound semiconductor element member with the small grade of the damage, a gallium nitride based compound semiconductor member, and a gallium nitride based compound semiconductor film.;SOLUTION: First, the photoluminescence measuring of a surface 10a of a compound semiconductor board 10 is performed. Next, in the light emission spectrum obtained by the photoluminescence measuring, the damage of the surface 10a of the compound semiconductor board 10 is evaluated using the half width W₁ of a peak P₁ in a wavelength ₁ corresponding the band gap of the compound semiconductor board 10.;COPYRIGHT: (C)2010,JPO&INPIT