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METHOD OF MANUFACTURING NITROGEN DOPED SILICON WAFER AND NITROGEN DOPED SILICON WAFER OBTAINED BY THE SAME
METHOD OF MANUFACTURING NITROGEN DOPED SILICON WAFER AND NITROGEN DOPED SILICON WAFER OBTAINED BY THE SAME
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机译:相同制造的氮掺杂硅晶片的制造方法和氮掺杂硅晶片的制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitrogen doped silicon wafer and a nitrogen doped silicon wafer obtained by the same, both of which facilitate manufacturing the nitrogen doped silicon wafer injected with high concentration nitrogen necessary for forming high density BMD.;SOLUTION: The method of manufacturing the nitrogen doped silicon wafer includes: a step in which any one of a surface and the backside or both thereof of a silicon wafer to which nitrogen is not doped are made to come in contact with HF solution, thereby silicon in a surface layer portion of a contact face is made to terminate by hydrogen; and a step in which the wafer after hydrogen termination step is held in a nitrogen contained atmosphere at a temperature of 1,100 to 1,300°C for 1 to 100 sec, and nitrogen is injected from a surface layer of a hydrogen termination step face to a depth of 20 μm and with a concentration of 5×1014 to 1×1016atoms/cm3.;COPYRIGHT: (C)2010,JPO&INPIT
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