Dielectric pulse etching of super high aspect ratio

摘要

SolutionsThrough the carbon mask inside the etching chamber, method in order selection to etch the dielectric of super high aspect ratio huichiya is offered. The flow of the etching gas which includes the fluoro carbon content molecule and the oxygen content molecule, is supplied to the etching chamber. The pulse bias RF signal is supplied. In order to convert the etching gas to the plasma, the excited RF signal is supplied. Selective figure Figure 4B